Low Frequency Noise in Junction Field Effect Transistors
نویسنده
چکیده
-Low frequency noise in four-terminal JFETs has been measured as a function of substrate (second gate) bias with temperature and drain current as additional variables. Sharp peaks of noise have been observed at some values of gate bias. The mechanism of low frequency noise caused by Schockley-Read-Hall (SRH) centres and the significance of charge capture processes in and near the channel are discussed. The experimental results show that most of the excess low frequency noise is caused by SRH centres situated in the transition region between the channel and the fully depleted region of the gate-channel junctions. In JFETs with gate-widths of 1000/zm or less the noise caused by unit electronic charge fluctuations at invidual SRH centres can be readily observed.
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